Low-Temperature, High Throughput Process for Thin, Large-Grained Poly Si: Final Technical Report, 24 May 1999--25 July 2003

    Research output: NRELSubcontract Report

    Abstract

    The overall project goal is to understand the fundamental gas phase, and surface and interface science issues relevant to low-temperature (T < 600oC) synthesis of polycrystalline silicon films on low-cost (e.g., glass) substrates. This understanding will be used to delineate the path to break through existing barriers to high-rate synthesis of high-quality thin films for polycrystalline siliconphotovoltaic applications. In this context, 'high quality P' refers to large grain size (> film thickness) and long (> film thickness) minority-carrier diffusion length.
    Original languageAmerican English
    Number of pages24
    StatePublished - 2003

    Bibliographical note

    Work performed by the California Institute of Technology, Pasadena, California

    NREL Publication Number

    • NREL/SR-520-34816

    Keywords

    • film thickness
    • fundamental gas phase
    • high-rate epitaxial growth
    • hot-wire chemical vapor deposition (HWCVD)
    • minority-carrier diffusion length
    • polycrystalline silicon films
    • PV
    • selective nucleation and solid-phase epitaxy (SNSPE)
    • surface and interface science
    • thin films

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