Abstract
The overall project goal is to understand the fundamental gas phase, and surface and interface science issues relevant to low-temperature (T < 600oC) synthesis of polycrystalline silicon films on low-cost (e.g., glass) substrates. This understanding will be used to delineate the path to break through existing barriers to high-rate synthesis of high-quality thin films for polycrystalline siliconphotovoltaic applications. In this context, 'high quality P' refers to large grain size (> film thickness) and long (> film thickness) minority-carrier diffusion length.
Original language | American English |
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Number of pages | 24 |
State | Published - 2003 |
Bibliographical note
Work performed by the California Institute of Technology, Pasadena, CaliforniaNREL Publication Number
- NREL/SR-520-34816
Keywords
- film thickness
- fundamental gas phase
- high-rate epitaxial growth
- hot-wire chemical vapor deposition (HWCVD)
- minority-carrier diffusion length
- polycrystalline silicon films
- PV
- selective nucleation and solid-phase epitaxy (SNSPE)
- surface and interface science
- thin films