Low Temperature Homoepitaxial Growth of GaAs by Dissociating Trimethylgallium and Trimethylarsenic in a Remote Hydrogen Plasma

Research output: Contribution to journal › Article

Work performed by Department of Electrical Enginering, Colorado State University, Fort Collins, Colorado

NREL Publication Number

@article{ba06596e4bf84afb91c6797bfec99d67,

title = "Low Temperature Homoepitaxial Growth of GaAs by Dissociating Trimethylgallium and Trimethylarsenic in a Remote Hydrogen Plasma",

author = "NREL",

note = "Work performed by Department of Electrical Enginering, Colorado State University, Fort Collins, Colorado",

year = "1991",

doi = "10.1016/0379-6787(91)90074-Y",

language = "American English",

volume = "30",

pages = "415--418",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier BV",

number = "Complete",

}

TY - JOUR

T1 - Low Temperature Homoepitaxial Growth of GaAs by Dissociating Trimethylgallium and Trimethylarsenic in a Remote Hydrogen Plasma

AU - NREL, null

N1 - Work performed by Department of Electrical Enginering, Colorado State University, Fort Collins, Colorado

PY - 1991

Y1 - 1991

U2 - 10.1016/0379-6787(91)90074-Y

DO - 10.1016/0379-6787(91)90074-Y

M3 - Article

SN - 0379-6787

VL - 30

SP - 415

EP - 418

JO - Solar Cells

JF - Solar Cells

IS - Complete

ER -