Low Temperature Homoepitaxial Growth of GaAs by Dissociating Trimethylgallium and Trimethylarsenic in a Remote Hydrogen Plasma

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)415-418
    Number of pages4
    JournalSolar Cells
    Issue numberComplete
    StatePublished - 1991

    Bibliographical note

    Work performed by Department of Electrical Enginering, Colorado State University, Fort Collins, Colorado

    NREL Publication Number

    • ACNR/JA-12429

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