Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage

Research output: Contribution to conferencePaper

Abstract

Hydrogen passivation of defects and impurities is becoming a necessary step for achieving high efficiency solar cells on materials from some photovoltaic (PV) vendors. Even though hydrogen passivation is a common technology, relatively little is known on the diffusion and passivation mechanisms of hydrogen in silicon. For example, it is not known why solar cells fabricated on the material fromsome vendors improve considerably more than others. Vendors who utilize this passivation may see a 20% increase in the cell performace, making it a remarkable process for those who benefit. There are other intriguing observations, the degree of passivation for solar cells fabricated on the material from the same vendor vary with the hydrogenation technique. Likewise, if the growth parameters ofthe material are changed, the degree of passivation can also change.
Original languageAmerican English
Pages191-196
Number of pages6
StatePublished - 1997
EventDefects in Semiconductors ICDS-19: 19th International Conference - Aviero, Portugal
Duration: 1 Jul 19971 Jul 1997

Conference

ConferenceDefects in Semiconductors ICDS-19: 19th International Conference
CityAviero, Portugal
Period1/07/971/07/97

NREL Publication Number

  • NREL/CP-520-22655

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