Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N

K. Alberi, S. A. Crooker, B. Fluegel, D. A. Beaton, A. J. Ptak, A. Mascarenhas

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations


The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.

Original languageAmerican English
Article numberArticle No. 156405
Number of pages5
JournalPhysical Review Letters
Issue number15
StatePublished - 12 Apr 2013

NREL Publication Number

  • NREL/JA-5900-58291


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