Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N

K. Alberi; S. A. Crooker; B. Fluegel; D. A. Beaton; A. J. Ptak; A. Mascarenhas

doi:10.1103/PhysRevLett.110.156405

Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N

K. Alberi, S. A. Crooker, B. Fluegel, D. A. Beaton, A. J. Ptak, A. Mascarenhas

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Abstract

The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.

Original language	American English
Article number	Article No. 156405
Number of pages	5
Journal	Physical Review Letters
Volume	110
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.110.156405 https://doi.org/10.1103/PhysRevLett.110.156405
State	Published - 12 Apr 2013

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NREL/JA-5900-58291

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title = "Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N",

abstract = "The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.",

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AU - Crooker, S. A.

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AU - Beaton, D. A.

AU - Ptak, A. J.

AU - Mascarenhas, A.

PY - 2013/4/12

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AB - The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.

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JF - Physical Review Letters

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M1 - Article No. 156405

ER -

Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N

Abstract

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