Magnetic Field-Induced Direct-Indirect Crossover in AlxGa1-xAs

Kirstin Alberi; Aleksej Mialitsin; Brian Fluegel; Scott Crooker; John Reno; Angelo Mascarenhas

doi:10.7567/APEX.7.111201

Magnetic Field-Induced Direct-Indirect Crossover in AlxGa1-xAs

Kirstin Alberi, Aleksej Mialitsin, Brian Fluegel, Scott Crooker, John Reno, Angelo Mascarenhas

Research output: Contribution to journal › Article › peer-review

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Abstract

We induce a direct-indirect band gap crossover in a single Al_xGa_1-xAs sample by using high magnetic fields. A reduction in the photoluminescence (PL) peak energy and onset of an asymmetric peak lineshape at magnetic fields >38 T result from a competition between the radiative recombination lifetime and the carrier migration time as the alloy becomes indirect. By analyzing the progression of the PL lineshape as the magnetic field is increased we show that the crossover is an alloy disorder-broadened, first-order phase transition.

Original language	American English
Article number	111201
Number of pages	4
Journal	Applied Physics Express
Volume	7
Issue number	11
DOIs	https://doi.org/10.7567/APEX.7.111201 https://doi.org/10.7567/APEX.7.111201
State	Published - 2014

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Publisher Copyright:
© 2014 The Japan Society of Applied Physics

NREL Publication Number

NREL/JA-5K00-62962

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AU - Reno, John

AU - Mascarenhas, Angelo

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AB - We induce a direct-indirect band gap crossover in a single AlxGa1-xAs sample by using high magnetic fields. A reduction in the photoluminescence (PL) peak energy and onset of an asymmetric peak lineshape at magnetic fields >38 T result from a competition between the radiative recombination lifetime and the carrier migration time as the alloy becomes indirect. By analyzing the progression of the PL lineshape as the magnetic field is increased we show that the crossover is an alloy disorder-broadened, first-order phase transition.

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Magnetic Field-Induced Direct-Indirect Crossover in AlxGa1-xAs

Abstract

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