Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles: Article No. 252102

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NREL Publication Number

@article{a0ee7dcfc32c45e190bdde4918db5f51,

title = "Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles: Article No. 252102",

keywords = "carbon dioxide, electric fields, electrodes, II-VI semiconductors, magnetic semiconductors",

author = "NREL",

year = "2009",

doi = "10.1063/1.3157273",

language = "American English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles

T2 - Article No. 252102

AU - NREL, null

PY - 2009

Y1 - 2009

KW - carbon dioxide

KW - electric fields

KW - electrodes

KW - II-VI semiconductors

KW - magnetic semiconductors

U2 - 10.1063/1.3157273

DO - 10.1063/1.3157273

M3 - Article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -