Abstract
Photoluminescence measurements on ordered InGaP2 were studied as a function of temperature, laser power density, and magnetic field. The temperature varied between 1.4 and 300 K, the laser power densities ranged from 10 nW/cm2 to 20 W/cm2, and the maximum magnetic field was 13.6 T. The data show two spectra, excitonic and band-to-band transitions, depending upon the incident laser power density.A consistent interpretation of the band-to-band spectrum leads to a spatially separated electron-hole transitions between the ordered domains. Three different mechanisms for spatially indirect transitions are presented. An analysis of the linear data also allows a determination of the valence-band mass in the 100 direction of mv apprx. 0.25 m0.
Original language | American English |
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Pages | 73-78 |
Number of pages | 6 |
State | Published - 1996 |
Event | Materials Research Society Symposium - Boston, Massachusetts Duration: 28 Nov 1995 → 30 Nov 1995 |
Conference
Conference | Materials Research Society Symposium |
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City | Boston, Massachusetts |
Period | 28/11/95 → 30/11/95 |
NREL Publication Number
- NREL/CP-21709