Manufacturing-Compatible Methods for the Formation of Cu(In,Ga)Se2 Thin Films

    Research output: Contribution to conferencePaper


    At EPV we continue to develop suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub oc/ uniformity data are also presented. The film formation involves sequential deposition of compoundselenides, Se, and Cu. The FF of some devices was improved by deposition of thin terminal In-Se layer, and surface modifcation by chemical treatments also improved device performance.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by Energy Photovoltaics, Inc. (EPV), Princeton, New Jersey and the National Renewable Energy Laboratory, Golden, Colorado

    NREL Publication Number

    • NREL/CP-22419


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