Manufacturing-Compatible Methods for the Formation of Cu(In,Ga)Se2 Thin Films

doi:10.1109/PVSC.1996.564271

Manufacturing-Compatible Methods for the Formation of Cu(In,Ga)Se2 Thin Films

Research output: Contribution to conference › Paper

Abstract

At EPV we continue to develop suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub oc/ uniformity data are also presented. The film formation involves sequential deposition of compoundselenides, Se, and Cu. The FF of some devices was improved by deposition of thin terminal In-Se layer, and surface modifcation by chemical treatments also improved device performance.

Original language	American English
Pages	889-892
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564271
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by Energy Photovoltaics, Inc. (EPV), Princeton, New Jersey and the National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

NREL/CP-22419

Access to Document

10.1109/PVSC.1996.564271

Cite this

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title = "Manufacturing-Compatible Methods for the Formation of Cu(In,Ga)Se2 Thin Films",

abstract = "At EPV we continue to develop suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub oc/ uniformity data are also presented. The film formation involves sequential deposition of compoundselenides, Se, and Cu. The FF of some devices was improved by deposition of thin terminal In-Se layer, and surface modifcation by chemical treatments also improved device performance.",

author = "NREL",

note = "Work performed by Energy Photovoltaics, Inc. (EPV), Princeton, New Jersey and the National Renewable Energy Laboratory, Golden, Colorado; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564271",

language = "American English",

pages = "889--892",

}

TY - CONF

T1 - Manufacturing-Compatible Methods for the Formation of Cu(In,Ga)Se2 Thin Films

AU - NREL, null

N1 - Work performed by Energy Photovoltaics, Inc. (EPV), Princeton, New Jersey and the National Renewable Energy Laboratory, Golden, Colorado

PY - 1996

Y1 - 1996

N2 - At EPV we continue to develop suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub oc/ uniformity data are also presented. The film formation involves sequential deposition of compoundselenides, Se, and Cu. The FF of some devices was improved by deposition of thin terminal In-Se layer, and surface modifcation by chemical treatments also improved device performance.

AB - At EPV we continue to develop suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub oc/ uniformity data are also presented. The film formation involves sequential deposition of compoundselenides, Se, and Cu. The FF of some devices was improved by deposition of thin terminal In-Se layer, and surface modifcation by chemical treatments also improved device performance.

U2 - 10.1109/PVSC.1996.564271

DO - 10.1109/PVSC.1996.564271

M3 - Paper

SP - 889

EP - 892

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Manufacturing-Compatible Methods for the Formation of Cu(In,Ga)Se2 Thin Films

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this