Abstract
This report describes the progress made in the 3-year program at ASE Americas, Inc., in the Photovoltaic Manufacturing Technology 4A2 Initiative on developing Edge-Defined Film-Fed Growth (EFG) silicon wafer technology. The work performed under this subcontract focused on advancing EFG manufacturing technology and lowering production costs in three areas: 1) EFG wafers - through better siliconfeedstock utilization, ASE realized improvements in growth, a wafer thickness reduction from 300 to 250 microns, and a higher bulk wafer electronic quality; additionally, new technology for the laser cutting of wafers was demonstrated; 2) Solar cells - by an increase in solar cell efficiency and by implementing a new glass-etch process; 3) Modules - by lamination cycle improvements, introducinga new diode housing, and simplifying module construction.; The program will exceed its overall goal of reducing EFG module manufacturing costs by 25%. About 17% of these improvements are already implemented in manufacturing. Technology to achieve an additional cost savings of 11% is in the final stages of introduction into large-scale manufacturing.
Original language | American English |
---|---|
Number of pages | 32 |
State | Published - 1999 |
Bibliographical note
Work performed by ASE Americas, Inc., Billerica, MassachusettsNREL Publication Number
- NREL/SR-520-26833