Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates

R. Venkatasubramanian; D. P. Malta; M. L. Timmons; J. B. Posthill; J. A. Hutchby; R. Ahrenkiel; B. Keyes; T. Wangensteen

Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates

R. Venkatasubramanian, D. P. Malta, M. L. Timmons, J. B. Posthill, J. A. Hutchby, R. Ahrenkiel, B. Keyes, T. Wangensteen

RTI International

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Several GaAs materials have been grown on optical-grade poly-Ge substrates. In this paper, a detailed characterization of these materials is presented. The materials and device properties of the GaAs materials are emphasised.

Original language	American English
Pages	1692-1695
Number of pages	4
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 5 Dec 1994 → 9 Dec 1994

Conference

Conference	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
City	Waikoloa, HI, USA
Period	5/12/94 → 9/12/94

Bibliographical note

Work performed by the Research Triangle Institute, Research Triangle Park, North Carolina and the National Renewable Energy Laboratory, Golden, Colorado

NREL Publication Number

NREL/CP-20154

Cite this

Venkatasubramanian, R., Malta, D. P., Timmons, M. L., Posthill, J. B., Hutchby, J. A., Ahrenkiel, R., Keyes, B., & Wangensteen, T. (1994). Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates. 1692-1695. Paper presented at Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2), Waikoloa, HI, USA.

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title = "Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates",

abstract = "Several GaAs materials have been grown on optical-grade poly-Ge substrates. In this paper, a detailed characterization of these materials is presented. The materials and device properties of the GaAs materials are emphasised.",

author = "R. Venkatasubramanian and Malta, {D. P.} and Timmons, {M. L.} and Posthill, {J. B.} and Hutchby, {J. A.} and R. Ahrenkiel and B. Keyes and T. Wangensteen",

note = "Work performed by the Research Triangle Institute, Research Triangle Park, North Carolina and the National Renewable Energy Laboratory, Golden, Colorado; Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

year = "1994",

language = "American English",

pages = "1692--1695",

}

Venkatasubramanian, R, Malta, DP, Timmons, ML, Posthill, JB, Hutchby, JA, Ahrenkiel, R , Keyes, B & Wangensteen, T 1994, 'Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates', Paper presented at Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2), Waikoloa, HI, USA, 5/12/94 - 9/12/94 pp. 1692-1695.

Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates. / Venkatasubramanian, R.; Malta, D. P.; Timmons, M. L. et al.
1994. 1692-1695 Paper presented at Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2), Waikoloa, HI, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates

AU - Venkatasubramanian, R.

AU - Malta, D. P.

AU - Timmons, M. L.

AU - Posthill, J. B.

AU - Hutchby, J. A.

AU - Ahrenkiel, R.

AU - Keyes, B.

AU - Wangensteen, T.

N1 - Work performed by the Research Triangle Institute, Research Triangle Park, North Carolina and the National Renewable Energy Laboratory, Golden, Colorado

PY - 1994

Y1 - 1994

N2 - Several GaAs materials have been grown on optical-grade poly-Ge substrates. In this paper, a detailed characterization of these materials is presented. The materials and device properties of the GaAs materials are emphasised.

AB - Several GaAs materials have been grown on optical-grade poly-Ge substrates. In this paper, a detailed characterization of these materials is presented. The materials and device properties of the GaAs materials are emphasised.

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M3 - Paper

AN - SCOPUS:0028722431

SP - 1692

EP - 1695

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates

Abstract

Conference

Bibliographical note

NREL Publication Number

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