Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport

T. H. Wang, T. F. Ciszek, M. Page, Y. Yan, R. Bauer, Q. Wang, J. Casey, R. Reedy, R. Matson, R. Ahrenkiel, M. M. Al-Jassim

Research output: Contribution to conferencePaperpeer-review

7 Scopus Citations

Abstract

Fast (3 μm/min) and direct deposition of large-grain (∼20 μn) polycrystalline silicon layers on foreign substrates at intermediate temperatures (∼900°C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm2/Vs at a doping density of 5.5×1017 cm-3 was measured in an as deposited material. After hydrogen passivation, it increased to 76 cm2/V/s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N+-a-Si/ia-Si/APIVT-Si(absorber)/P+-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.

Original languageAmerican English
Pages138-141
Number of pages4
DOIs
StatePublished - 2000
EventTwenty-Eighth IEEE Photovoltaic Specialists Conference 2000 - Anchorage, Alaska
Duration: 15 Sep 200022 Sep 2000

Conference

ConferenceTwenty-Eighth IEEE Photovoltaic Specialists Conference 2000
CityAnchorage, Alaska
Period15/09/0022/09/00

NREL Publication Number

  • NREL/CP-590-28949

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