Abstract
Fast (3 μm/min) and direct deposition of large-grain (∼20 μn) polycrystalline silicon layers on foreign substrates at intermediate temperatures (∼900°C) is achieved by an atmospheric pressure iodine vapor transport technique. A hole Hall mobility of 51 cm2/Vs at a doping density of 5.5×1017 cm-3 was measured in an as deposited material. After hydrogen passivation, it increased to 76 cm2/V/s. Crystallographic defects mostly consist of less detrimental stacking faults and twins, with a few dislocations. Diagnostic PV devices using an N+-a-Si/ia-Si/APIVT-Si(absorber)/P+-CZ-Si structure demonstrated an open-circuit voltage of 0.48 V and 0.58 V at one and 13 suns, respectively. Highly [110]-oriented silicon layers were attained.
Original language | American English |
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Pages | 138-141 |
Number of pages | 4 |
DOIs | |
State | Published - 2000 |
Event | Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000 - Anchorage, Alaska Duration: 15 Sep 2000 → 22 Sep 2000 |
Conference
Conference | Twenty-Eighth IEEE Photovoltaic Specialists Conference 2000 |
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City | Anchorage, Alaska |
Period | 15/09/00 → 22/09/00 |
NREL Publication Number
- NREL/CP-590-28949