Abstract
We have fabricated-high efficiency, Cu(In,Ga)Se2 (CIGS)-based photovoltaic (PV) devices by four different processes. Each process may be characterized as either sequential or concurrent deposition of the metals with or without an activity of Se. A world-record, total-area efficiency of 17.7% has been achieved by the concurrent delivery of the metals in the presence of Se. Ga has been introducedin to the device in such a manner as to produced homogeneous, normal profiling, and double-profiling graded band gap structures. This has resulted in an open-circuit voltage (Voc) parameter of 680 mV and a fill-factor over 78%. The quality of CIGS-based films and devices is becoming decoupled from the method of film delivery. This leades to novel, fast, and low-cost methods for absorberfabrications. Two such depositon techniques, sputtering and electrodepositon, will also be discussed and results to date presented. Finally, a fabrication model has been developed allowing for simple translation of these processes to a manufacturing environment for the large-scale production of modules.
Original language | American English |
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Pages | 83-105 |
Number of pages | 23 |
State | Published - 1997 |
Event | NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996 |
Conference
Conference | NREL/SNL Photovoltaics Program Review: 14th Conference |
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City | Lakewood, Colorado |
Period | 18/11/96 → 22/11/96 |
NREL Publication Number
- NREL/CP-23657