Materials and Processing Issues in Thin-Film Cu(In, Ga)Se2-Based Solar Cells

    Research output: Contribution to conferencePaper

    Abstract

    We have fabricated-high efficiency, Cu(In,Ga)Se2 (CIGS)-based photovoltaic (PV) devices by four different processes. Each process may be characterized as either sequential or concurrent deposition of the metals with or without an activity of Se. A world-record, total-area efficiency of 17.7% has been achieved by the concurrent delivery of the metals in the presence of Se. Ga has been introducedin to the device in such a manner as to produced homogeneous, normal profiling, and double-profiling graded band gap structures. This has resulted in an open-circuit voltage (Voc) parameter of 680 mV and a fill-factor over 78%. The quality of CIGS-based films and devices is becoming decoupled from the method of film delivery. This leades to novel, fast, and low-cost methods for absorberfabrications. Two such depositon techniques, sputtering and electrodepositon, will also be discussed and results to date presented. Finally, a fabrication model has been developed allowing for simple translation of these processes to a manufacturing environment for the large-scale production of modules.
    Original languageAmerican English
    Pages83-105
    Number of pages23
    StatePublished - 1997
    EventNREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado
    Duration: 18 Nov 199622 Nov 1996

    Conference

    ConferenceNREL/SNL Photovoltaics Program Review: 14th Conference
    CityLakewood, Colorado
    Period18/11/9622/11/96

    NREL Publication Number

    • NREL/CP-23657

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