Measurement of Built-In Electrical Potential in Cu(In,Ga)Se2 Solar Cells

C. S. Jiang; F. S. Hasoon; H. R. Moutinho; H. A. Al-Thani; M. J. Romero; M. M. Al-Jassim

doi:10.1557/proc-763-b8.3

Measurement of Built-In Electrical Potential in Cu(In,Ga)Se2 Solar Cells

C. S. Jiang, F. S. Hasoon, H. R. Moutinho, H. A. Al-Thani, M. J. Romero, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

The built-in electrical potential on cross sections of Cu(In,Ga)Se ₂ (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. In the conditions of open and short circuits, no significant potential variation on the p-n junction was probed due to the surface Fermi-level pinning. With an external reverse-bias voltage applied to the device, we were able to probe the potential on the junction; the potential profiles demonstrate that the p-n junction is a buried homojunction, located 30-80 nm from the CIGS/CdS interface in the CIGS film. The potential measurement over the CdS and ZnO layers, which is consistent with the band diagram calculations, indicates that the CdS and ZnO layers are inactive for the collection of photoexcited carriers.

Original language	American English
Pages	309-314
Number of pages	6
DOIs	https://doi.org/10.1557/proc-763-b8.3
State	Published - 2003
Event	Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Compound Semiconductor Photovoltaics: Materials Research Society Symposium
City	San Francisco, California
Period	22/04/03 → 25/04/03

NREL Publication Number

NREL/CP-520-33950

Access to Document

10.1557/proc-763-b8.3

Cite this

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title = "Measurement of Built-In Electrical Potential in Cu(In,Ga)Se2 Solar Cells",

abstract = "The built-in electrical potential on cross sections of Cu(In,Ga)Se 2 (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. In the conditions of open and short circuits, no significant potential variation on the p-n junction was probed due to the surface Fermi-level pinning. With an external reverse-bias voltage applied to the device, we were able to probe the potential on the junction; the potential profiles demonstrate that the p-n junction is a buried homojunction, located 30-80 nm from the CIGS/CdS interface in the CIGS film. The potential measurement over the CdS and ZnO layers, which is consistent with the band diagram calculations, indicates that the CdS and ZnO layers are inactive for the collection of photoexcited carriers.",

author = "Jiang, {C. S.} and Hasoon, {F. S.} and Moutinho, {H. R.} and Al-Thani, {H. A.} and Romero, {M. J.} and Al-Jassim, {M. M.}",

year = "2003",

doi = "10.1557/proc-763-b8.3",

language = "American English",

pages = "309--314",

note = "Compound Semiconductor Photovoltaics: Materials Research Society Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

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T1 - Measurement of Built-In Electrical Potential in Cu(In,Ga)Se2 Solar Cells

AU - Jiang, C. S.

AU - Hasoon, F. S.

AU - Moutinho, H. R.

AU - Al-Thani, H. A.

AU - Romero, M. J.

AU - Al-Jassim, M. M.

PY - 2003

Y1 - 2003

N2 - The built-in electrical potential on cross sections of Cu(In,Ga)Se 2 (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. In the conditions of open and short circuits, no significant potential variation on the p-n junction was probed due to the surface Fermi-level pinning. With an external reverse-bias voltage applied to the device, we were able to probe the potential on the junction; the potential profiles demonstrate that the p-n junction is a buried homojunction, located 30-80 nm from the CIGS/CdS interface in the CIGS film. The potential measurement over the CdS and ZnO layers, which is consistent with the band diagram calculations, indicates that the CdS and ZnO layers are inactive for the collection of photoexcited carriers.

AB - The built-in electrical potential on cross sections of Cu(In,Ga)Se 2 (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. In the conditions of open and short circuits, no significant potential variation on the p-n junction was probed due to the surface Fermi-level pinning. With an external reverse-bias voltage applied to the device, we were able to probe the potential on the junction; the potential profiles demonstrate that the p-n junction is a buried homojunction, located 30-80 nm from the CIGS/CdS interface in the CIGS film. The potential measurement over the CdS and ZnO layers, which is consistent with the band diagram calculations, indicates that the CdS and ZnO layers are inactive for the collection of photoexcited carriers.

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U2 - 10.1557/proc-763-b8.3

DO - 10.1557/proc-763-b8.3

M3 - Paper

AN - SCOPUS:0344927739

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EP - 314

T2 - Compound Semiconductor Photovoltaics: Materials Research Society Symposium

Y2 - 22 April 2003 through 25 April 2003

ER -

Measurement of Built-In Electrical Potential in Cu(In,Ga)Se2 Solar Cells

Abstract

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