Measurement of Built-In Electrical Potential in III-V Solar Cells by Scanning Kelvin Probe Microscopy

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Abstract

Built-in electrical potential in III-V solar cells was measured and examined. Scanning Kelvin probe microscopy was used to measure the electrical potential. It was found that electrical potential on the p-n junction was photoactive and that on the GaInP2/GaAs interface was photoinactive.

Original languageAmerican English
Pages (from-to)10035-10040
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number12
DOIs
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33016

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