Measurement of Built-In Electrical Potential in III-V Solar Cells by Scanning Kelvin Probe Microscopy

Chun Sheng Jiang; H. R. Moutinho; D. J. Friedman; J. F. Geisz; M. M. Al-Jassim

doi:10.1063/1.1573736

Measurement of Built-In Electrical Potential in III-V Solar Cells by Scanning Kelvin Probe Microscopy

Chun Sheng Jiang, H. R. Moutinho, D. J. Friedman, J. F. Geisz, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

68 Scopus Citations

Abstract

Built-in electrical potential in III-V solar cells was measured and examined. Scanning Kelvin probe microscopy was used to measure the electrical potential. It was found that electrical potential on the p-n junction was photoactive and that on the GaInP₂/GaAs interface was photoinactive.

Original language	American English
Pages (from-to)	10035-10040
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.1573736 https://doi.org/10.1063/1.1573736
State	Published - 2003

NREL Publication Number

NREL/JA-520-33016

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@article{bbd1de8d59254826b942f9ead18507c0,

title = "Measurement of Built-In Electrical Potential in III-V Solar Cells by Scanning Kelvin Probe Microscopy",

abstract = "Built-in electrical potential in III-V solar cells was measured and examined. Scanning Kelvin probe microscopy was used to measure the electrical potential. It was found that electrical potential on the p-n junction was photoactive and that on the GaInP2/GaAs interface was photoinactive.",

author = "Jiang, {Chun Sheng} and Moutinho, {H. R.} and Friedman, {D. J.} and Geisz, {J. F.} and Al-Jassim, {M. M.}",

year = "2003",

doi = "10.1063/1.1573736",

language = "American English",

volume = "93",

pages = "10035--10040",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Measurement of Built-In Electrical Potential in III-V Solar Cells by Scanning Kelvin Probe Microscopy

AU - Jiang, Chun Sheng

AU - Moutinho, H. R.

AU - Friedman, D. J.

AU - Geisz, J. F.

AU - Al-Jassim, M. M.

PY - 2003

Y1 - 2003

N2 - Built-in electrical potential in III-V solar cells was measured and examined. Scanning Kelvin probe microscopy was used to measure the electrical potential. It was found that electrical potential on the p-n junction was photoactive and that on the GaInP2/GaAs interface was photoinactive.

AB - Built-in electrical potential in III-V solar cells was measured and examined. Scanning Kelvin probe microscopy was used to measure the electrical potential. It was found that electrical potential on the p-n junction was photoactive and that on the GaInP2/GaAs interface was photoinactive.

UR - http://www.scopus.com/inward/record.url?scp=0038819645&partnerID=8YFLogxK

U2 - 10.1063/1.1573736

DO - 10.1063/1.1573736

M3 - Article

AN - SCOPUS:0038819645

SN - 0021-8979

VL - 93

SP - 10035

EP - 10040

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Measurement of Built-In Electrical Potential in III-V Solar Cells by Scanning Kelvin Probe Microscopy

Abstract

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