Measurement of Charge-Separation Potentials in GaAs1-xNx

S. W. Johnston; R. K. Ahrenkiel; C. W. Tu; Y. G. Hong

doi:10.1116/1.1603281

Measurement of Charge-Separation Potentials in GaAs1-xNx

S. W. Johnston, R. K. Ahrenkiel, C. W. Tu, Y. G. Hong

Materials Science

University of California at San Diego

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

A description about measurement of charge-separation potentials in GaAs_1-xN_x films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

Original language	American English
Pages (from-to)	1765-1769
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	5
DOIs	https://doi.org/10.1116/1.1603281 https://doi.org/10.1116/1.1603281
State	Published - Sep 2003

NREL Publication Number

NREL/JA-520-31773

Access to Document

Cite this

@article{b876316b2ea64f859e2c48875dd4339b,

title = "Measurement of Charge-Separation Potentials in GaAs1-xNx",

abstract = "A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.",

author = "Johnston, {S. W.} and Ahrenkiel, {R. K.} and Tu, {C. W.} and Hong, {Y. G.}",

year = "2003",

month = sep,

doi = "10.1116/1.1603281",

language = "American English",

volume = "21",

pages = "1765--1769",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Measurement of Charge-Separation Potentials in GaAs1-xNx

AU - Johnston, S. W.

AU - Ahrenkiel, R. K.

AU - Tu, C. W.

AU - Hong, Y. G.

PY - 2003/9

Y1 - 2003/9

N2 - A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

AB - A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

UR - http://www.scopus.com/inward/record.url?scp=0142059003&partnerID=8YFLogxK

U2 - 10.1116/1.1603281

DO - 10.1116/1.1603281

M3 - Article

AN - SCOPUS:0142059003

SN - 0734-2101

VL - 21

SP - 1765

EP - 1769

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Measurement of Charge-Separation Potentials in GaAs1-xNx

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this