Measurement of Charge-Separation Potentials in GaAs1-xNx

S. W. Johnston, R. K. Ahrenkiel, C. W. Tu, Y. G. Hong

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations


A description about measurement of charge-separation potentials in GaAs1-xNx films were investigated. The films were grown by gas-source molecular-beam epitaxy. The spectral response and photoconductive lifetime was measured as the function of temperature. Resonant-coupled photoconductive decay method was used for analysis.

Original languageAmerican English
Pages (from-to)1765-1769
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number5
StatePublished - Sep 2003

NREL Publication Number

  • NREL/JA-520-31773


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