Measurement of Deep Levels in Hydrogenated Amorphous Silicon by Transient Voltage Spectroscopy

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)981-983
    Number of pages3
    JournalApplied Physics Letters
    Volume42
    Issue number11
    DOIs
    StatePublished - 1983

    Bibliographical note

    Work performed by Xerox Palo Alto Research Center, Palo Alto, California

    NREL Publication Number

    • ACNR/JA-7286

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