Measurement of Deep Levels in Hydrogenated Amorphous Silicon by Transient Voltage Spectroscopy

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NLR Publication Number

@article{c8445fd870ee44eda57c9492536eccfb,

title = "Measurement of Deep Levels in Hydrogenated Amorphous Silicon by Transient Voltage Spectroscopy",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1983",

doi = "10.1063/1.93822",

language = "American English",

volume = "42",

pages = "981--983",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Measurement of Deep Levels in Hydrogenated Amorphous Silicon by Transient Voltage Spectroscopy

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1983

Y1 - 1983

U2 - 10.1063/1.93822

DO - 10.1063/1.93822

M3 - Article

SN - 0003-6951

VL - 42

SP - 981

EP - 983

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -