Abstract
The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.
Original language | American English |
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Pages (from-to) | 3528-3531 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 64 |
Issue number | 7 |
DOIs | |
State | Published - 1988 |
NREL Publication Number
- ACNR/JA-213-11373