Measurement of Electron Diffusion Lengths in ITO/p-InP by Surface Photocurrents

Thomas Hanak, R. K. Ahrenkiel

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations


The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.

Original languageAmerican English
Pages (from-to)3528-3531
Number of pages4
JournalJournal of Applied Physics
Issue number7
StatePublished - 1988

NREL Publication Number

  • ACNR/JA-213-11373


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