Measurement of Electron Diffusion Lengths in ITO/p-InP by Surface Photocurrents

Thomas Hanak; R. K. Ahrenkiel

doi:10.1063/1.341491

Measurement of Electron Diffusion Lengths in ITO/p-InP by Surface Photocurrents

Thomas Hanak
, R. K. Ahrenkiel

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.

Original language	American English
Pages (from-to)	3528-3531
Number of pages	4
Journal	Journal of Applied Physics
Volume	64
Issue number	7
DOIs	https://doi.org/10.1063/1.341491 https://doi.org/10.1063/1.341491
State	Published - 1988

NLR Publication Number

ACNR/JA-213-11373

Access to Document

Cite this

@article{28e3b8a710df44dd92c94e7cc330f3b2,

title = "Measurement of Electron Diffusion Lengths in ITO/p-InP by Surface Photocurrents",

abstract = "The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.",

author = "Thomas Hanak and Ahrenkiel, \{R. K.\}",

year = "1988",

doi = "10.1063/1.341491",

language = "American English",

volume = "64",

pages = "3528--3531",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Measurement of Electron Diffusion Lengths in ITO/p-InP by Surface Photocurrents

AU - Hanak, Thomas

AU - Ahrenkiel, R. K.

PY - 1988

Y1 - 1988

N2 - The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.

AB - The electron diffusion length is deduced in n-indium tin oxide/p-InP heterojunctions by a short-circuit photocurrent technique. The technique involved the nonlinear least-squares fit of the photocurrent and junction capacitance to a simple model. The absorption coefficient of the monochromatic light is also produced by the fit. This produces an electron effective diffusion length in the p-InP which varies from about 1.0 μm for highly absorbed light up to about 8.0 μm for deeply penetrating light.

UR - https://www.scopus.com/pages/publications/36549103729

U2 - 10.1063/1.341491

DO - 10.1063/1.341491

M3 - Article

AN - SCOPUS:36549103729

SN - 0021-8979

VL - 64

SP - 3528

EP - 3531

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Measurement of Electron Diffusion Lengths in ITO/p-InP by Surface Photocurrents

Abstract

NLR Publication Number

Access to Document

Other files and links

Fingerprint

Cite this