Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence

Craig Swartz; Sanjoy Paul; Lorelle Mansfield; Jian Li; Mark Holtz

doi:10.35848/1347-4065/ab89f8

Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence

Craig Swartz
, Sanjoy Paul
, Lorelle Mansfield
, Jian Li
, Mark Holtz

Materials Science

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn_1-xGa_xSe₂ (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

Original language	American English
Article number	055504
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	59
Issue number	5
DOIs	https://doi.org/10.35848/1347-4065/ab89f8 https://doi.org/10.35848/1347-4065/ab89f8
State	Published - 2020

Bibliographical note

Publisher Copyright:
© 2020 The Japan Society of Applied Physics.

NLR Publication Number

NREL/JA-5K00-76618

Keywords

band offset
CIGS
Cu(In,Ga)Se2
illumination dependent open-circuit voltage
illumination dependent photoluminescence intensity
quasi-Fermi-level splitting
temperature dependent open-circuit voltage
temperature dependent photoluminescence intensity

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Swartz, C., Paul, S., Mansfield, L., Li, J., & Holtz, M. (2020). Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence. Japanese Journal of Applied Physics, Part 2: Letters, 59(5), Article 055504. https://doi.org/10.35848/1347-4065/ab89f8, https://doi.org/10.35848/1347-4065/ab89f8

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title = "Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence",

abstract = "Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.",

keywords = "band offset, CIGS, Cu(In,Ga)Se2, illumination dependent open-circuit voltage, illumination dependent photoluminescence intensity, quasi-Fermi-level splitting, temperature dependent open-circuit voltage, temperature dependent photoluminescence intensity",

author = "Craig Swartz and Sanjoy Paul and Lorelle Mansfield and Jian Li and Mark Holtz",

note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.",

year = "2020",

doi = "10.35848/1347-4065/ab89f8",

language = "American English",

volume = "59",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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Swartz, C, Paul, S, Mansfield, L, Li, J & Holtz, M 2020, 'Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence', Japanese Journal of Applied Physics, Part 2: Letters, vol. 59, no. 5, 055504. https://doi.org/10.35848/1347-4065/ab89f8, https://doi.org/10.35848/1347-4065/ab89f8

Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence. / Swartz, Craig; Paul, Sanjoy; Mansfield, Lorelle et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 59, No. 5, 055504, 2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence

AU - Swartz, Craig

AU - Paul, Sanjoy

AU - Mansfield, Lorelle

AU - Li, Jian

AU - Holtz, Mark

PY - 2020

Y1 - 2020

N2 - Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

AB - Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

KW - band offset

KW - CIGS

KW - Cu(In,Ga)Se2

KW - illumination dependent open-circuit voltage

KW - illumination dependent photoluminescence intensity

KW - quasi-Fermi-level splitting

KW - temperature dependent open-circuit voltage

KW - temperature dependent photoluminescence intensity

UR - https://www.scopus.com/pages/publications/85084405890

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DO - 10.35848/1347-4065/ab89f8

M3 - Article

AN - SCOPUS:85084405890

SN - 0021-4922

VL - 59

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

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ER -

Swartz C, Paul S, Mansfield L, Li J, Holtz M. Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence. Japanese Journal of Applied Physics, Part 2: Letters. 2020;59(5):055504. doi: 10.35848/1347-4065/ab89f8, 10.35848/1347-4065/ab89f8

Measurement of Shunt Resistance and Conduction Band Offset in Cu(In, Ga)Se2 Solar Cells through Joint Analysis of Temperature and Intensity Dependence of Open-Circuit Voltage and Photoluminescence

Abstract

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Keywords

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