Measurement of the Electron and Hole Mobilities on Semiconductors with Layered Structure

Measurement of the Electron and Hole Mobilities on Semiconductors with Layered Structure

Research output: Contribution to conference › Paper

Original language	American English
Pages	537-547
Number of pages	11
State	Published - 1982
Event	Electrochemical Society Meeting - Denver, Colorado Duration: 11 Oct 1981 → 16 Oct 1981

Conference

Conference	Electrochemical Society Meeting
City	Denver, Colorado
Period	11/10/81 → 16/10/81

Bibliographical note

Work performed by Ames Laboratory, US DOE, Ames, Iowa and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-233-4578

Cite this

@conference{da5dffe0845b4680941f9254e4c94286,

title = "Measurement of the Electron and Hole Mobilities on Semiconductors with Layered Structure",

author = "NREL",

note = "Work performed by Ames Laboratory, US DOE, Ames, Iowa and Solar Energy Research Institute, Golden, Colorado; Electrochemical Society Meeting ; Conference date: 11-10-1981 Through 16-10-1981",

year = "1982",

language = "American English",

pages = "537--547",

}

TY - CONF

T1 - Measurement of the Electron and Hole Mobilities on Semiconductors with Layered Structure

AU - NREL, null

N1 - Work performed by Ames Laboratory, US DOE, Ames, Iowa and Solar Energy Research Institute, Golden, Colorado

PY - 1982

Y1 - 1982

M3 - Paper

SP - 537

EP - 547

T2 - Electrochemical Society Meeting

Y2 - 11 October 1981 through 16 October 1981

ER -