Abstract
In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 °C. The temperature-dependent J 01and J 02dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 °C. As the temperature is increased, we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ∼30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-Temperature solar cell operation.
Original language | American English |
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Article number | 7511789 |
Pages (from-to) | 1345-1352 |
Number of pages | 8 |
Journal | IEEE Journal of Photovoltaics |
Volume | 6 |
Issue number | 5 |
DOIs | |
State | Published - Sep 2016 |
Bibliographical note
Publisher Copyright:© 2011-2012 IEEE.
NREL Publication Number
- NREL/JA-5J00-66661
Keywords
- gallium arsenide
- photovoltaic cells
- photovoltaic systems
- temperature
- temperature measurement
- temperature sensors