Measuring Diode Resistivity of Passivated Contacts

Research output: Contribution to conferencePaper

1 Scopus Citations

Abstract

A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.
Original languageAmerican English
Pages1832-1834
Number of pages3
DOIs
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017

Conference

Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.
Period25/06/1730/06/17

NREL Publication Number

  • NREL/CP-5900-67874

Keywords

  • carrier-selective passivated contacts
  • contact resistivity
  • silicon solar cells

Fingerprint

Dive into the research topics of 'Measuring Diode Resistivity of Passivated Contacts'. Together they form a unique fingerprint.

Cite this