Abstract
A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.
Original language | American English |
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Pages | 1832-1834 |
Number of pages | 3 |
DOIs | |
State | Published - 2018 |
Event | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017 |
Conference
Conference | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
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City | Washington, D.C. |
Period | 25/06/17 → 30/06/17 |
NREL Publication Number
- NREL/CP-5900-67874
Keywords
- carrier-selective passivated contacts
- contact resistivity
- silicon solar cells