Measuring Diode Resistivity of Passivated Contacts

William Nemeth; San Theingi; David Young; Pauls Stradins

doi:10.1109/PVSC.2017.8366681

Measuring Diode Resistivity of Passivated Contacts

William Nemeth, San Theingi, David Young, Pauls Stradins

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

1 Scopus Citations

Abstract

A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.

Original language	American English
Pages	1832-1834
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2017.8366681
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NREL Publication Number

NREL/CP-5900-67874

Keywords

carrier-selective passivated contacts
contact resistivity
silicon solar cells

Access to Document

10.1109/PVSC.2017.8366681

Cite this

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title = "Measuring Diode Resistivity of Passivated Contacts",

abstract = "A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.",

keywords = "carrier-selective passivated contacts, contact resistivity, silicon solar cells",

author = "William Nemeth and San Theingi and David Young and Pauls Stradins",

year = "2018",

doi = "10.1109/PVSC.2017.8366681",

language = "American English",

pages = "1832--1834",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - CONF

T1 - Measuring Diode Resistivity of Passivated Contacts

AU - Nemeth, William

AU - Theingi, San

AU - Young, David

AU - Stradins, Pauls

PY - 2018

Y1 - 2018

N2 - A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.

AB - A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.

KW - carrier-selective passivated contacts

KW - contact resistivity

KW - silicon solar cells

U2 - 10.1109/PVSC.2017.8366681

DO - 10.1109/PVSC.2017.8366681

M3 - Paper

SP - 1832

EP - 1834

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Measuring Diode Resistivity of Passivated Contacts

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

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Cite this