Abstract
Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.
Original language | American English |
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Number of pages | 6 |
State | Published - 2017 |
Event | European PV Solar Energy Conference and Exhibition - Amsterdam, The Netherlands Duration: 25 Sep 2017 → 29 Sep 2017 |
Conference
Conference | European PV Solar Energy Conference and Exhibition |
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City | Amsterdam, The Netherlands |
Period | 25/09/17 → 29/09/17 |
NREL Publication Number
- NREL/CP-5J00-70204
Keywords
- four-terminal
- III-V
- silicon
- tandem