Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

Manuel Schnabel, Adele Tamboli, Emily Warren, Talysa Klein, Marinus Van Hest, John Geisz, Pauls Stradins, Myles Steiner, Michael Rienaecker, Agnes Merkle, S. Kajari-Schroeder, Raphael Niepelt, Jan Schmidt, Rolf Brendel, Robby Peibst

Research output: Contribution to conferencePaper

Abstract

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.
Original languageAmerican English
Number of pages6
StatePublished - 2017
EventEuropean PV Solar Energy Conference and Exhibition - Amsterdam, The Netherlands
Duration: 25 Sep 201729 Sep 2017

Conference

ConferenceEuropean PV Solar Energy Conference and Exhibition
CityAmsterdam, The Netherlands
Period25/09/1729/09/17

NREL Publication Number

  • NREL/CP-5J00-70204

Keywords

  • four-terminal
  • III-V
  • silicon
  • tandem

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