Mechanism of Asymmetric Lineshape Broadening in GaAs1-xNx Raman Spectra

Aleksej Mialitsin, Brian Fluegel, Aaron Ptak, Angelo Mascarenhas

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Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs 1-xN x alloy (x=0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.

Original languageAmerican English
Article number045209
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
StatePublished - 19 Jul 2012

NREL Publication Number

  • NREL/JA-5900-56360


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