Mechanism of Asymmetric Lineshape Broadening in GaAs1-xNx Raman Spectra

Aleksej Mialitsin; Brian Fluegel; Aaron Ptak; Angelo Mascarenhas

doi:10.1103/PhysRevB.86.045209

Mechanism of Asymmetric Lineshape Broadening in GaAs1-xNx Raman Spectra

Aleksej Mialitsin, Brian Fluegel, Aaron Ptak, Angelo Mascarenhas

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs _1-xN _x alloy (x=0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.

Original language	American English
Article number	045209
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.86.045209 https://doi.org/10.1103/PhysRevB.86.045209
State	Published - 19 Jul 2012

NREL Publication Number

NREL/JA-5900-56360

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@article{184a27ed7f584037b3f2c17eed58082d,

title = "Mechanism of Asymmetric Lineshape Broadening in GaAs1-xNx Raman Spectra",

abstract = "Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs 1-xN x alloy (x=0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.",

author = "Aleksej Mialitsin and Brian Fluegel and Aaron Ptak and Angelo Mascarenhas",

year = "2012",

month = jul,

day = "19",

doi = "10.1103/PhysRevB.86.045209",

language = "American English",

volume = "86",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Mechanism of Asymmetric Lineshape Broadening in GaAs1-xNx Raman Spectra

AU - Mialitsin, Aleksej

AU - Fluegel, Brian

AU - Ptak, Aaron

AU - Mascarenhas, Angelo

PY - 2012/7/19

Y1 - 2012/7/19

N2 - Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs 1-xN x alloy (x=0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.

AB - Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs 1-xN x alloy (x=0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.

UR - http://www.scopus.com/inward/record.url?scp=84864627642&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.86.045209

DO - 10.1103/PhysRevB.86.045209

M3 - Article

AN - SCOPUS:84864627642

SN - 1098-0121

VL - 86

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 045209

ER -

Mechanism of Asymmetric Lineshape Broadening in GaAs1-xNx Raman Spectra

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