Mechanism of Enhanced Diffusion of Phosphorus in Silicon During Rapid Photothermal Processing of Solar Cells

Robert Reedy Jr.

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	776-781
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	3
DOIs	https://doi.org/10.1109/TED.2010.2096511
State	Published - 2011

NREL Publication Number

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title = "Mechanism of Enhanced Diffusion of Phosphorus in Silicon During Rapid Photothermal Processing of Solar Cells",

keywords = "diffusion coefficient, enhanced diffusion, quantum energy, rapid photothermal processing (RPP)",

author = "{Reedy Jr.}, Robert",

year = "2011",

doi = "10.1109/TED.2010.2096511",

language = "American English",

volume = "58",

pages = "776--781",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Mechanism of Enhanced Diffusion of Phosphorus in Silicon During Rapid Photothermal Processing of Solar Cells

AU - Reedy Jr., Robert

PY - 2011

Y1 - 2011

KW - diffusion coefficient

KW - enhanced diffusion

KW - quantum energy

KW - rapid photothermal processing (RPP)

U2 - 10.1109/TED.2010.2096511

DO - 10.1109/TED.2010.2096511

M3 - Article

SN - 0018-9383

VL - 58

SP - 776

EP - 781

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -