@misc{ca7acc38e27e4f61b31f5b27d11fc955,
title = "Mechanism of Hydrogen Passivation in Passivated Contact Si Solar Cells",
abstract = "In this abstract, we discuss the mechanism of hydrogen passivation on symmetrical n-Si/ultra-thin SiO2/polySi structures. The hydrogen was introduced from different hydrogen-containing dielectric layers (AlOx:H and SiNx:H and their stacks), as well as by forming gas anneal (FGA). The effusion of hydrogen both from the dielectric layers and in the underlying poly-Si was explored using a quadrupole mass spectrometer (QMS) and FTIR spectroscopy. We show that the strength of hydrogen bonds depend on the deposition technique as well as hydrogenation mechanism. While a PECVD SiNx:H loses hydrogen at a peak temperature of ~450 degrees C, LPCVD SiNx:H, although having less hydrogen compared to PECVD, effuses at a peak temperature of ~850 degrees C. This becomes important to maintain passivation of passivated contacts after firing of metal contacts at high temperatures. On the other hand, it has been observed that SiNx:H provides larger amount of hydrogen to poly-Si after FGA compared to FGA treated AlOx:H, which acts as a capping layer and helps in retaining the hydrogen up to higher temperatures.",
keywords = "hydrogen bonding configuration, hydrogen passivation, passivation, photovoltaic, PV, Si solar cells",
author = "Suchismita Mitra and Matthew Hartenstein and Harvey Guthrey and William Nemeth and Steve Harvey and David Young and Sumit Agarwal and Paul Stradins",
year = "2023",
language = "American English",
series = "Presented at the SiliconPV 2023 Conference, 10-14 April 2023, Delft, The Netherlands",
type = "Other",
}