Abstract
We construct a phase diagram for silicon layer growth on (001) Si by hot-wire chemical vapor deposition (HWCVD), for rates from 10 to 150 nm/min and for substrate temperatures from 500 to 800 °C. Our results show that a mixed mono and dihydride surface termination during growth causes polycrystalline growth; some H-free sites are needed for epitaxy. For epitaxial films (T>620 °C), the dislocation density decreases with increasing growth temperature because of reduced O contamination of the surface. The best HWCVD epitaxial layers have dislocation densities of 105cm-2.
Original language | American English |
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Article number | Article No. 201901 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 20 |
DOIs | |
State | Published - 17 May 2010 |
NREL Publication Number
- NREL/JA-520-48500
Keywords
- electron beam evaporation
- epitaxy
- silicon films