Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901

Ina Martin; Manuel Romero; Carolyn Beall; Maxim Shub; Charles Teplin

doi:10.1063/1.3422474

Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901

Ina Martin, Manuel Romero, Carolyn Beall, Maxim Shub, Charles Teplin

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

24 Scopus Citations

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3422474
State	Published - 2010

NREL Publication Number

NREL/JA-520-48500

Keywords

electron beam evaporation
epitaxy
silicon films

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10.1063/1.3422474

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title = "Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901",

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language = "American English",

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journal = "Applied Physics Letters",

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AU - Martin, Ina

AU - Romero, Manuel

AU - Beall, Carolyn

AU - Shub, Maxim

AU - Teplin, Charles

PY - 2010

Y1 - 2010

KW - electron beam evaporation

KW - epitaxy

KW - silicon films

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U2 - 10.1063/1.3422474

DO - 10.1063/1.3422474

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901

NREL Publication Number

Keywords

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