Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C

Charles W. Teplin, Kirstin Alberi, Maxim Shub, Carolyn Beall, Ina T. Martin, Manuel J. Romero, David L. Young, Robert C. Reedy, Paul Stradins, Howard M. Branz

Research output: Contribution to journalArticlepeer-review

24 Scopus Citations

Abstract

We construct a phase diagram for silicon layer growth on (001) Si by hot-wire chemical vapor deposition (HWCVD), for rates from 10 to 150 nm/min and for substrate temperatures from 500 to 800 °C. Our results show that a mixed mono and dihydride surface termination during growth causes polycrystalline growth; some H-free sites are needed for epitaxy. For epitaxial films (T>620 °C), the dislocation density decreases with increasing growth temperature because of reduced O contamination of the surface. The best HWCVD epitaxial layers have dislocation densities of 105cm-2.

Original languageAmerican English
Article numberArticle No. 201901
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
StatePublished - 17 May 2010

NREL Publication Number

  • NREL/JA-520-48500

Keywords

  • electron beam evaporation
  • epitaxy
  • silicon films

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