Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901

Ina Martin; Manuel Romero; Carolyn Beall; Maxim Shub; Charles Teplin

doi:10.1063/1.3422474

Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901

Ina Martin
, Manuel Romero
, Carolyn Beall
, Maxim Shub
, Charles Teplin

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3422474
State	Published - 2010

NLR Publication Number

NREL/JA-520-48500

Keywords

electron beam evaporation
epitaxy
silicon films

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10.1063/1.3422474

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@article{6cab1e8b2cba4b62b813ca18a63c85c2,

title = "Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901",

keywords = "electron beam evaporation, epitaxy, silicon films",

author = "Ina Martin and Manuel Romero and Carolyn Beall and Maxim Shub and Charles Teplin",

year = "2010",

doi = "10.1063/1.3422474",

language = "American English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C

T2 - Article No. 201901

AU - Martin, Ina

AU - Romero, Manuel

AU - Beall, Carolyn

AU - Shub, Maxim

AU - Teplin, Charles

PY - 2010

Y1 - 2010

KW - electron beam evaporation

KW - epitaxy

KW - silicon films

UR - https://www.scopus.com/pages/publications/77952986103

U2 - 10.1063/1.3422474

DO - 10.1063/1.3422474

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Mechanisms Controlling the Phase and Dislocation Density in Epitaxial Silicon Films Grown from Silane Below 800 C: Article No. 201901

NLR Publication Number

Keywords

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