Mechanisms for Long Carrier Lifetime in Cd(Se)Te Double Heterostructures

Mahisha Amarasinghe, David Albin, Darius Kuciauskas, John Moseley, Craig Perkins, Wyatt Metzger

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


II-VI semiconductors are used in numerous electro-optical applications. For example, CdTe-based solar technology is cost competitive with other electricity generation sources, yet there is still significant room to improve. Carrier lifetime has historically been well below the radiative recombination limit. Lifetimes reaching beyond 100 ns can significantly enhance performance and enable novel device structures. Here, double heterostructures (DHs) with passivated interfaces demonstrate lifetimes exceeding 1 μs, yet this appears only for CdSeTe and not for CdTe DHs. We compare the passivation mechanisms in CdTe and CdSeTe DHs. CdSeTe lifetimes on the order of 1 μs correspond to a combination of superior intragrain lifetime, extremely low grain boundary recombination and greater Te4+ interfacial presence compared to CdTe.

Original languageAmerican English
Article numberArticle No. 211102
Number of pages5
JournalApplied Physics Letters
Issue number21
StatePublished - 24 May 2021

Bibliographical note

Publisher Copyright:
© 2021 Author(s).

NREL Publication Number

  • NREL/JA-5K00-78809


  • cathodoluminescence
  • CdTe solar cells
  • double heterostructures
  • thin film photovoltaics
  • TRPL
  • XPS


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