Mechanisms of Growth of Nanocrystalline Silicon Deposited by Hot-Wire Chemical Vapor Deposition

H. R. Moutinho, C. S. Jiang, Y. Xu, B. To, K. M. Jones, C. W. Teplin, M. M. Al-Jassim

Research output: Contribution to conferencePaperpeer-review


We have studied the growth of silicon thin films by hot-wire chemical vapor deposition under different conditions of filament temperature (T f) and hydrogen dilution ratio (R). We found that these two parameters have a similar effect on the properties of the deposited films and show how they interact to control the growth dynamics. For relatively low values of T f and/or R, the films are amorphous. An increase in the value of these parameters results in the appearance of a new phase, characterized by heavily faulted (220)-oriented columnar grains; for even higher values, a randomly oriented nanocrystalline phase appears. In general, there is more than one phase present in the film, and the microstructure varies as we go from the bottom to the top of the film. Although T f and R have similar effects on the physical properties, they affect the deposition rate in a different way.

Original languageAmerican English
Number of pages4
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 3 Jan 20057 Jan 2005


Conference31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL

Bibliographical note

For preprint version see NREL/CP-520-37345

NREL Publication Number

  • NREL/CP-520-38906


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