Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

    Research output: Contribution to conferencePaper

    Abstract

    Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.
    Original languageAmerican English
    Number of pages7
    StatePublished - 1997
    Event26th IEEE Photovoltaic Specialists Conference - Anaheim, California
    Duration: 29 Sep 19973 Oct 1997

    Conference

    Conference26th IEEE Photovoltaic Specialists Conference
    CityAnaheim, California
    Period29/09/973/10/97

    NREL Publication Number

    • NREL/CP-520-23578

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