Abstract
Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.
Original language | American English |
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Number of pages | 7 |
State | Published - 1997 |
Event | 26th IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
Conference | 26th IEEE Photovoltaic Specialists Conference |
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City | Anaheim, California |
Period | 29/09/97 → 3/10/97 |
NREL Publication Number
- NREL/CP-520-23578