Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

Research output: Contribution to conferencePaper

Abstract

Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.
Original languageAmerican English
Number of pages7
StatePublished - 1997
Event26th IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

Conference26th IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

NREL Publication Number

  • NREL/CP-520-23578

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