Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

Research output: Contribution to conference › Paper

Abstract

Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.

Original language	American English
Number of pages	7
State	Published - 1997
Event	26th IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	26th IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

NREL Publication Number

NREL/CP-520-23578

Access to Document

https://www.nrel.gov/docs/legosti/fy97/23578.pdf

Cite this

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title = "Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal",

abstract = "Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.",

author = "NREL",

year = "1997",

language = "American English",

note = "26th IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

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TY - CONF

T1 - Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

AU - NREL, null

PY - 1997

Y1 - 1997

N2 - Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.

AB - Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.

M3 - Paper

T2 - 26th IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this