Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

doi:10.1109/PVSC.1997.653916

Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

NREL

Research output: Contribution to conference › Paper

Abstract

Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.

Original language	American English
Pages	25-30
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.1997.653916
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-23578

NLR Publication Number

NREL/CP-520-25073

Access to Document

10.1109/PVSC.1997.653916

Cite this

@conference{7eb0b9a05bea499ca1258800a127de0b,

title = "Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal",

abstract = "Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.",

author = "NREL",

note = "For preprint version, including full text online document, see NREL/CP-520-23578; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.653916",

language = "American English",

pages = "25--30",

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PY - 1997

Y1 - 1997

N2 - Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.

AB - Surface damage in a silicon wafer, produced by mechanical polishing or ion implantation, is shown to mediate diffusion of hydrogen from a molecular ambient such as a forming gas. Experimental results show that; the formation of a N+ region of a solar cell can produce significant surface stress similar to mechanical polishing. Results of hydrogen diffusion produced by forming gas annealing ofvarious commercial photovoltaic silicon substrates and cells are discussed.

U2 - 10.1109/PVSC.1997.653916

DO - 10.1109/PVSC.1997.653916

M3 - Paper

SP - 25

EP - 30

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Mechanism(s) of Hydrogen Diffusion in Silicon Solar Cells During Forming Gas Anneal

Abstract

Conference

Bibliographical note

NLR Publication Number

Access to Document

Fingerprint

Cite this