Mesoscopic Fluctuations in the Distribution of Electronic Defects Near the Surface Layer of Cu(In,Ga)Se2

Research output: Contribution to conferencePaper

Abstract

High-resolution cathodoluminescence spectroscopic imaging (CLSI) has been employed to study the radiative recombination processes in Cu(In,Ga)Se2 (CIGS) films used in solar cells. Mesoscopic fluctuations of the electrostatic potential explain the observed behavior for the radiative transitions identified in the emission spectrum. We show evidence for passivation of grain boundaries near thesurface layers of these films. In addition, our results suggest different point defect physics for the surface layers. These studies have been primarily performed on the CIGS films used in the recently achieved world-record efficiency cell at NREL (19.2%) as a reference to understand differences in performance for the CIGS. However, most of the results are applicable to the standard CIGSdeposited by the three-stage process and differences are subtle.
Original languageAmerican English
Number of pages7
StatePublished - 2003
EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
CityDenver, Colorado
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-33566

Keywords

  • CIGS
  • grain boundaries (GBS)
  • high-resolution cathodoluminescence spectroscopic imaging
  • mesoscopic fluctuations
  • passivation
  • point-defect physics
  • recombination
  • three-stage process

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