Mesoscopic Fluctuations in the Distribution of Electronic Defects Near the Surface Layer of Cu(In,Ga)Se2

Mesoscopic Fluctuations in the Distribution of Electronic Defects Near the Surface Layer of Cu(In,Ga)Se2

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Abstract

High-resolution cathodoluminescence spectroscopic imaging (CLSI) has been employed to study the radiative recombination processes in Cu(In,Ga)Se2 (CIGS) films used in solar cells. Mesoscopic fluctuations of the electrostatic potential explain the observed behavior for the radiative transitions identified in the emission spectrum. We show evidence for passivation of grain boundaries near thesurface layers of these films. In addition, our results suggest different point defect physics for the surface layers. These studies have been primarily performed on the CIGS films used in the recently achieved world-record efficiency cell at NREL (19.2%) as a reference to understand differences in performance for the CIGS. However, most of the results are applicable to the standard CIGSdeposited by the three-stage process and differences are subtle.

Original language	American English
Number of pages	7
State	Published - 2003
Event	National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003

Conference

Conference	National Center for Photovoltaics (NCPV) and Solar Program Review Meeting
City	Denver, Colorado
Period	24/03/03 → 26/03/03

NREL Publication Number

NREL/CP-520-33566

Keywords

CIGS
grain boundaries (GBS)
high-resolution cathodoluminescence spectroscopic imaging
mesoscopic fluctuations
passivation
point-defect physics
recombination
three-stage process

Access to Document

https://www.nrel.gov/docs/fy03osti/33566.pdf

Cite this

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title = "Mesoscopic Fluctuations in the Distribution of Electronic Defects Near the Surface Layer of Cu(In,Ga)Se2",

abstract = "High-resolution cathodoluminescence spectroscopic imaging (CLSI) has been employed to study the radiative recombination processes in Cu(In,Ga)Se2 (CIGS) films used in solar cells. Mesoscopic fluctuations of the electrostatic potential explain the observed behavior for the radiative transitions identified in the emission spectrum. We show evidence for passivation of grain boundaries near thesurface layers of these films. In addition, our results suggest different point defect physics for the surface layers. These studies have been primarily performed on the CIGS films used in the recently achieved world-record efficiency cell at NREL (19.2%) as a reference to understand differences in performance for the CIGS. However, most of the results are applicable to the standard CIGSdeposited by the three-stage process and differences are subtle.",

keywords = "CIGS, grain boundaries (GBS), high-resolution cathodoluminescence spectroscopic imaging, mesoscopic fluctuations, passivation, point-defect physics, recombination, three-stage process",

author = "NREL",

year = "2003",

language = "American English",

note = "National Center for Photovoltaics (NCPV) and Solar Program Review Meeting ; Conference date: 24-03-2003 Through 26-03-2003",

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TY - CONF

T1 - Mesoscopic Fluctuations in the Distribution of Electronic Defects Near the Surface Layer of Cu(In,Ga)Se2

AU - NREL, null

PY - 2003

Y1 - 2003

N2 - High-resolution cathodoluminescence spectroscopic imaging (CLSI) has been employed to study the radiative recombination processes in Cu(In,Ga)Se2 (CIGS) films used in solar cells. Mesoscopic fluctuations of the electrostatic potential explain the observed behavior for the radiative transitions identified in the emission spectrum. We show evidence for passivation of grain boundaries near thesurface layers of these films. In addition, our results suggest different point defect physics for the surface layers. These studies have been primarily performed on the CIGS films used in the recently achieved world-record efficiency cell at NREL (19.2%) as a reference to understand differences in performance for the CIGS. However, most of the results are applicable to the standard CIGSdeposited by the three-stage process and differences are subtle.

AB - High-resolution cathodoluminescence spectroscopic imaging (CLSI) has been employed to study the radiative recombination processes in Cu(In,Ga)Se2 (CIGS) films used in solar cells. Mesoscopic fluctuations of the electrostatic potential explain the observed behavior for the radiative transitions identified in the emission spectrum. We show evidence for passivation of grain boundaries near thesurface layers of these films. In addition, our results suggest different point defect physics for the surface layers. These studies have been primarily performed on the CIGS films used in the recently achieved world-record efficiency cell at NREL (19.2%) as a reference to understand differences in performance for the CIGS. However, most of the results are applicable to the standard CIGSdeposited by the three-stage process and differences are subtle.

KW - CIGS

KW - grain boundaries (GBS)

KW - high-resolution cathodoluminescence spectroscopic imaging

KW - mesoscopic fluctuations

KW - passivation

KW - point-defect physics

KW - recombination

KW - three-stage process

M3 - Paper

T2 - National Center for Photovoltaics (NCPV) and Solar Program Review Meeting

Y2 - 24 March 2003 through 26 March 2003

ER -

Mesoscopic Fluctuations in the Distribution of Electronic Defects Near the Surface Layer of Cu(In,Ga)Se2

Abstract

Conference

NREL Publication Number

Keywords

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