Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells

Steven Johnston, Siyu Guo, Winston Schoenfeld, Kristopher Davis

Research output: Contribution to conferencePaperpeer-review

Abstract

Metal induced recombination (i.e., contact recombination) is a significant loss mechanism for homojunction crystalline silicon solar cells. In this work, a method is proposed to extract the metal induced recombination parameters using high- resolution photoluminescence PL imaging. By calculating the voltage distribution profile between fingers, the total current flow from the semiconductor to the finger, per area, can be obtained. The total recombination current at the semiconductor area and the metal contact area are then calculated and used to calculate the reverse saturation current for each region. The metal induced reverse saturation current (j-{0m}) is then obtained. This measurement allows the extraction of j-{0m} on finished solar cells without the need to make special metal test structures. This is a big advantage over existing methods.

Original languageAmerican English
Pages3743-3745
Number of pages3
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

  • NREL/CP-5K00-73700

Keywords

  • metal
  • photoluminescence
  • recombination
  • silicon wafer solar cells

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