Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells

Steven Johnston; Siyu Guo; Winston Schoenfeld; Kristopher Davis

doi:10.1109/PVSC.2018.8547945

Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells

Steven Johnston, Siyu Guo, Winston Schoenfeld, Kristopher Davis

Materials Science

University of Central Florida

Research output: Contribution to conference › Paper › peer-review

Abstract

Metal induced recombination (i.e., contact recombination) is a significant loss mechanism for homojunction crystalline silicon solar cells. In this work, a method is proposed to extract the metal induced recombination parameters using high- resolution photoluminescence PL imaging. By calculating the voltage distribution profile between fingers, the total current flow from the semiconductor to the finger, per area, can be obtained. The total recombination current at the semiconductor area and the metal contact area are then calculated and used to calculate the reverse saturation current for each region. The metal induced reverse saturation current (j-{0m}) is then obtained. This measurement allows the extraction of j-{0m} on finished solar cells without the need to make special metal test structures. This is a big advantage over existing methods.

Original language	American English
Pages	3743-3745
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2018.8547945 https://doi.org/10.1109/PVSC.2018.8547945
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

NREL/CP-5K00-73700

Keywords

metal
photoluminescence
recombination
silicon wafer solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Johnston, S., Guo, S., Schoenfeld, W., & Davis, K. (2018). Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells. 3743-3745. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. https://doi.org/10.1109/PVSC.2018.8547945, https://doi.org/10.1109/PVSC.2018.8547945

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abstract = "Metal induced recombination (i.e., contact recombination) is a significant loss mechanism for homojunction crystalline silicon solar cells. In this work, a method is proposed to extract the metal induced recombination parameters using high- resolution photoluminescence PL imaging. By calculating the voltage distribution profile between fingers, the total current flow from the semiconductor to the finger, per area, can be obtained. The total recombination current at the semiconductor area and the metal contact area are then calculated and used to calculate the reverse saturation current for each region. The metal induced reverse saturation current (j-{0m}) is then obtained. This measurement allows the extraction of j-{0m} on finished solar cells without the need to make special metal test structures. This is a big advantage over existing methods.",

keywords = "metal, photoluminescence, recombination, silicon wafer solar cells",

author = "Steven Johnston and Siyu Guo and Winston Schoenfeld and Kristopher Davis",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

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doi = "10.1109/PVSC.2018.8547945",

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Johnston, S, Guo, S, Schoenfeld, W & Davis, K 2018, 'Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells', Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18 - 15/06/18 pp. 3743-3745. https://doi.org/10.1109/PVSC.2018.8547945, https://doi.org/10.1109/PVSC.2018.8547945

Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells. / Johnston, Steven; Guo, Siyu; Schoenfeld, Winston et al.
2018. 3743-3745 Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells

AU - Johnston, Steven

AU - Guo, Siyu

AU - Schoenfeld, Winston

AU - Davis, Kristopher

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Y1 - 2018/11/26

N2 - Metal induced recombination (i.e., contact recombination) is a significant loss mechanism for homojunction crystalline silicon solar cells. In this work, a method is proposed to extract the metal induced recombination parameters using high- resolution photoluminescence PL imaging. By calculating the voltage distribution profile between fingers, the total current flow from the semiconductor to the finger, per area, can be obtained. The total recombination current at the semiconductor area and the metal contact area are then calculated and used to calculate the reverse saturation current for each region. The metal induced reverse saturation current (j-{0m}) is then obtained. This measurement allows the extraction of j-{0m} on finished solar cells without the need to make special metal test structures. This is a big advantage over existing methods.

AB - Metal induced recombination (i.e., contact recombination) is a significant loss mechanism for homojunction crystalline silicon solar cells. In this work, a method is proposed to extract the metal induced recombination parameters using high- resolution photoluminescence PL imaging. By calculating the voltage distribution profile between fingers, the total current flow from the semiconductor to the finger, per area, can be obtained. The total recombination current at the semiconductor area and the metal contact area are then calculated and used to calculate the reverse saturation current for each region. The metal induced reverse saturation current (j-{0m}) is then obtained. This measurement allows the extraction of j-{0m} on finished solar cells without the need to make special metal test structures. This is a big advantage over existing methods.

KW - metal

KW - photoluminescence

KW - recombination

KW - silicon wafer solar cells

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DO - 10.1109/PVSC.2018.8547945

M3 - Paper

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T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Metal Induced Recombination Parameter Extraction using High Resolution Photoluminescence Imaging for Silicon Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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