Abstract
Perovskite photovoltaics are attractive for both terrestrial and space applications. Although terrestrial conditions require durability against stressors such as moisture and partial shading, space poses different challenges: radiation, atomic oxygen, vacuum and high-temperature operation. Here we demonstrate a silicon oxide layer that hardens perovskite photovoltaics to critical space stressors. A 1-um-thick silicon oxide layer evaporated atop the device contacts blocks 0.05 MeV protons at fluences of 10^15 cm-2 without a loss in power conversion efficiency, which results in a device lifetime increase in low Earth orbit by x20 and in highly elliptical orbit by x30. Silicon-oxide-protected Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3) (MA, methylammonium; FA, formamidinium cation) and CsPbI2Br cells survive submergence in water and N,N-dimethylformamide. Furthermore, moisture tolerance of Sn-Pb and CsPbI2Br devices is boosted. Devices are also found to retain power conversion efficiencies on exposure to alpha irradiation and atomic oxygen. This barrier technology is a step towards lightweight packaging designs for both space and terrestrial applications.
Original language | American English |
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Pages (from-to) | 191-202 |
Number of pages | 12 |
Journal | Nature Energy |
Volume | 8 |
DOIs | |
State | Published - 2023 |
NREL Publication Number
- NREL/JA-5K00-84590
Keywords
- perovskite
- photovoltaics
- radiation
- space