Abstract
The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten ...Ang.../second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten ...Ang.../second for the a-SiGe:H intrinsiclayer.
| Original language | American English |
|---|---|
| Patent number | 7,122,736 B2 |
| State | Published - 2006 |
NREL Publication Number
- NREL/PT-520-40989