Method for Making Photovoltaic Devices Using Oxygenated Semiconductor Thin Film Layers

David Albin; James Johnson; Scott Feldman-Peabody; Mark Pavol; Robert Gossman

Method for Making Photovoltaic Devices Using Oxygenated Semiconductor Thin Film Layers

David Albin (Inventor), James Johnson (Inventor), Scott Feldman-Peabody (Inventor), Mark Pavol (Inventor), Robert Gossman (Inventor)

Materials Science

First Solar

Research output: Patent

Abstract

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Original language	American English
Patent number	8,912,037 B2
Filing date	16/12/14
State	Published - 2014

NREL Publication Number

NREL/PT-5200-70400

Keywords

absorber
film
photovoltaic
solar
substrate

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

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Cite this

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title = "Method for Making Photovoltaic Devices Using Oxygenated Semiconductor Thin Film Layers",

abstract = "A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.",

keywords = "absorber, film, photovoltaic, solar, substrate",

author = "David Albin and James Johnson and Scott Feldman-Peabody and Mark Pavol and Robert Gossman",

year = "2014",

language = "American English",

type = "Patent",

note = "8,912,037 B2",

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TY - PAT

T1 - Method for Making Photovoltaic Devices Using Oxygenated Semiconductor Thin Film Layers

AU - Albin, David

AU - Johnson, James

AU - Feldman-Peabody, Scott

AU - Pavol, Mark

AU - Gossman, Robert

PY - 2014

Y1 - 2014

N2 - A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

AB - A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

KW - absorber

KW - film

KW - photovoltaic

KW - solar

KW - substrate

M3 - Patent

M1 - 8,912,037 B2

Y2 - 2014/12/16

ER -

Method for Making Photovoltaic Devices Using Oxygenated Semiconductor Thin Film Layers

Abstract

NREL Publication Number

Keywords

UN SDGs

Access to Document

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Cite this