Method for Passivating Crystal Silicon Surfaces

NREL (Inventor)

Research output: Patent

Abstract

In a method of making a c-Si-based cell or a uc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for asufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.
Original languageAmerican English
Patent number7,629,236 B2
StatePublished - 2009

NREL Publication Number

  • NREL/PT-5200-50466

Keywords

  • c-Si-based cell
  • crystal silicon surfaces
  • polysilicon cell

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