Method for Rapid, Controllable Growth and Thickness, of Epitaxial Silicon Films

NREL (Inventor)

Research output: Patent

Abstract

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed.
Original languageAmerican English
Patent number7,601,215 B1
StatePublished - 2009

NREL Publication Number

  • NREL/PT-520-47026

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