Abstract
The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.
Original language | American English |
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Patent number | 11,120,990 B2 |
Filing date | 14/09/21 |
State | Published - 2021 |
NREL Publication Number
- NREL/PT-5900-81021
Keywords
- crystalline silicon
- III-V crystal
- plurality of v-grooves