Methods for Depositing III-V Compositions on Silicon

Emily Warren (Inventor), Theresa Saenz (Inventor), Jeramy Zimmerman (Inventor)

Research output: Patent


The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.
Original languageAmerican English
Patent number11,120,990 B2
Filing date14/09/21
StatePublished - 2021

NREL Publication Number

  • NREL/PT-5900-81021


  • crystalline silicon
  • III-V crystal
  • plurality of v-grooves


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