Abstract
An aspect of the present disclosure is a device that includes a first layer that includes a hole-transport material and an acid, where the first layer has a conductivity between 20 Mu Siem and 500 Mu Siem. In some embodiments of the present disclosure, the first layer may absorb light having a wave-length between 400 nm and 600 nm. In some embodiments of the present disclosure, the hole-transport material may include at least one of 2,2',7,7'-tetrakis(N,N-di-p-methoxy-phenylamine)-9 ,9'-spiro bifluorene (spiro-0 Me TAD), a derivative of spiro-OMeTAD, poly(triarylamine), poly(3-hexylthiophene), and/or N,N'-bis(3-methylphenyl)-N,N'-di-phenylbenzidine.
Original language | American English |
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Patent number | 10,332,688 B2 |
Filing date | 25/06/19 |
State | Published - 2019 |
NREL Publication Number
- NREL/PT-5900-74252
Keywords
- absorbance
- conductivity
- density
- layer
- voltage
- wavelength