Abstract
The present disclosure relates to a device that includes a layer that includes a perovskite, where the layer has a first side and a second side defining a thickness, the perovskite has a bulk composition as defined by AB(X.sub.1-yX.sub.y').sub.3, where A includes a first cation, B includes a second cation, X includes iodide, and X' includes bromide, y is between 0.2 and 0.8, inclusively, and the thickness has a bromide concentration gradient across the thickness with a maximum concentration at or in the proximity of the first side and a minimum concentration at the second side.
Original language | American English |
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Patent number | 11,985,836 B2 |
Filing date | 14/05/24 |
State | Published - 2024 |
NREL Publication Number
- NREL/PT-5900-89938
Keywords
- bromide concentration gradient
- scanning electron microscopy
- transient absorption (TA)