Abstract
The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.
Original language | American English |
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Patent number | 11,302,868 B2 |
Filing date | 12/04/22 |
State | Published - 2022 |
NREL Publication Number
- NREL/PT-5900-82641
Keywords
- intermediate solid perovskite layer
- precursor solution
- quantum dot