Methods for Producing Perovskite-Containing Devices

Kai Zhu (Inventor), Fei Zhang (Inventor), Joseph Berry (Inventor)

Research output: Patent

Abstract

The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.
Original languageAmerican English
Patent number11,302,868 B2
Filing date12/04/22
StatePublished - 2022

NREL Publication Number

  • NREL/PT-5900-82641

Keywords

  • intermediate solid perovskite layer
  • precursor solution
  • quantum dot

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