Methods of Forming CIGS Films

Lorelle Mansfield (Inventor), Kannan Ramanathan (Inventor)

Research output: Patent


Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.
Original languageAmerican English
Patent number9,768,015
Filing date18/09/17
StatePublished - 2017

NREL Publication Number

  • NREL/PT-5K00-70150


  • CIGS
  • copper indium gallium selenide solar cells
  • precursors
  • substrates


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