Abstract
Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.
| Original language | American English |
|---|---|
| Patent number | 9,768,015 |
| Filing date | 18/09/17 |
| State | Published - 2017 |
NREL Publication Number
- NREL/PT-5K00-70150
Keywords
- CIGS
- copper indium gallium selenide solar cells
- precursors
- substrates