Methods of Forming Interdigitated Back Contact Layers

William Nemeth (Inventor), Pauls Stradins (Inventor), Vincenzo LaSalvia (Inventor), Matthew Page (Inventor), David Young (Inventor)

Research output: Patent


Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.
Original languageAmerican English
Patent number10,714,652 B2
Filing date14/07/20
StatePublished - 2020

NREL Publication Number

  • NREL/PT-5900-77393


  • IBC
  • interdigitated back contact layers
  • n-type amorphous hydrogenated silicon
  • p-type amorphous hydrogenated silicon


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