Methods of Forming Interdigitated Back Contact Layers

William Nemeth; Pauls Stradins; Vincenzo LaSalvia; Matthew Page; David Young

Methods of Forming Interdigitated Back Contact Layers

William Nemeth (Inventor), Pauls Stradins (Inventor), Vincenzo LaSalvia (Inventor), Matthew Page (Inventor), David Young (Inventor)

Chemistry and Nanoscience

Research output: Patent

Abstract

Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

Original language	American English
Patent number	10,714,652 B2
Filing date	14/07/20
State	Published - 2020

NREL Publication Number

NREL/PT-5900-77393

Keywords

IBC
interdigitated back contact layers
n-type amorphous hydrogenated silicon
p-type amorphous hydrogenated silicon

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Cite this

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title = "Methods of Forming Interdigitated Back Contact Layers",

abstract = "Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.",

keywords = "IBC, interdigitated back contact layers, n-type amorphous hydrogenated silicon, p-type amorphous hydrogenated silicon",

author = "William Nemeth and Pauls Stradins and Vincenzo LaSalvia and Matthew Page and David Young",

year = "2020",

language = "American English",

type = "Patent",

note = "10,714,652 B2",

}

TY - PAT

T1 - Methods of Forming Interdigitated Back Contact Layers

AU - Nemeth, William

AU - Stradins, Pauls

AU - LaSalvia, Vincenzo

AU - Page, Matthew

AU - Young, David

PY - 2020

Y1 - 2020

N2 - Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

AB - Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

KW - IBC

KW - interdigitated back contact layers

KW - n-type amorphous hydrogenated silicon

KW - p-type amorphous hydrogenated silicon

M3 - Patent

M1 - 10,714,652 B2

Y2 - 2020/07/14

ER -

Methods of Forming Interdigitated Back Contact Layers

Abstract

NREL Publication Number

Keywords

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