Abstract
Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 .mu.m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.
Original language | American English |
---|---|
Patent number | 10,134,590 B2 |
Filing date | 20/11/18 |
State | Published - 2018 |
NREL Publication Number
- NREL/PT-5K00-72898
Keywords
- polycrystalline
- single-crystal structure
- vapor deposition