Abstract
Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.
Original language | American English |
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Patent number | 8,021,641 |
State | Published - 2011 |
NREL Publication Number
- NREL/PT-5900-53178